Shanghai Silicate Institute has made new progress in the research of 3D printing silicon carbide ceramics
碳化硅(SiC)陶瓷由于其易氧化、难熔融、高吸光,成为3D打印陶瓷中亟待攻克的难题,目前大多数3D打印SiC陶瓷方法中打印材料固含量较低、硅含量较高、力学性能较低,普遍采用化学气相沉积CVI(Chem…
碳化硅(SiC)陶瓷由于其易氧化、难熔融、高吸光,成为3D打印陶瓷中亟待攻克的难题,目前大多数3D打印SiC陶瓷方法中打印材料固含量较低、硅含量较高、力学性能较低,普遍采用化学气相沉积CVI(Chem…